Tingxin Li

txli89@sjtu.edu.cn

Education

2011-2016 Ph.D. in Condensed Matter Physics, [Peking University]

2011-2016 Bachelor's Degree in Physics, [Northwest University]

Experience

2023-Present Researcher, Hefei National Laboratory

2021-Present Associate Professor, Shanghai Jiao Tong University

Overview of Academic Research

My research interests focus on exploring and studying novel quantum phenomena in low-dimensional quantum materials, such as 2D van der Waals materials and their moiré superlattices. By integrating atomic-layer-precision assembly with advanced nanofabrication and low-temperature quantum transport measurements, we have unveiled novel quantum phases in high-quality 2D materials and their moiré devices. Key discoveries include the observation of integer and fractional quantum anomalous Hall effects, gate-tunable superconductivity, and other interaction-driven correlated quantum matters in these systems. These results have been published in journals including Nature, Nature Physics, PRX, PRL, etc.

Major Honors and Awards

2024 Ruiyuan Young Scientist Award

Representative Publications

1. Xu, F. et al. Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2. Nature Physics 21, 542-548 (2025).

2. Li, C. et al. Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene. Nature 631, 300-306 (2024).

3. Xu, F. et al. Observation of Integer and Fractional Quantum Anomalous Hall Effects in Twisted Bilayer MoTe2. Phys. Rev. X 13, 031037 (2023).

4. Li, T. et al. Quantum anomalous Hall effect from intertwined moiré bands. Nature 600, 641-646 (2021).

5. Li, T. et al. Continuous Mott transition in semiconductor moiré superlattices. Nature 597, 350-354 (2021).