Chuan‑Feng Li
cfli@ustc.edu.cn
Education
1994-1999 Ph.D. in Physics, University of Science and Technology of China
1990-1994 Bachelor's Degree in Physics, University of Science and Technology of China
Experience
2021-Present Distinguished Researcher, Hefei National Laboratory
2012-Present Professor, University of Science and Technology of China
2005-2012 Associate Professor, University of Science and Technology of China
1999-2005 Lecturer, University of Science and Technology of China
Overview of Academic Research
Prof. Chuan-Feng Li’s research interests include constructing quantum entanglement networks and researching quantum physics using quantum information technology.
His/her major achievements include:
*Developed high-performance solid-state quantum memory; Demonstrated multi-mode quantum repeaters; Realized 1-hour coherent optical storage and demonstrated nonlocal photonic quantum gates over 7.0 km;
*First experimental observation of wave-particle superposition states of light; Implemented quantum Maxwell’s demon to demonstrate algorithmic quantum cooling; Verified entanglement-assisted entropic uncertainty relations experimentally; Achieved super-Heisenberg quantum metrology with indefinite gate order.
Related results published in Nature, Nature Photonics, Nature Physics, and Physical Review Letters.
Research Directions/Fields:
Solid state quantum memory
Quantum communications
Quantum network
Major Honors and Awards
2020 China Rao Yutai Physical Award
2020 China National Natural Science Award (Second Prize)
Representative Publications
1. Wang, J. et al. Purcell-Enhanced Generation of Photonic Bell States via the Inelastic Scattering off Single Atoms. Physical Review Letters 134, 053401 (2025).
2. Liu, Z.-H. et al. Exploring the boundary of quantum correlations with a time-domain optical processor, Science Advances 11, eabd8080 (2025).
3. Yin, P. et al. Experimental super-Heisenberg quantum metrology with indefinite gate order, Nature Physics 19, 1122–1127 (2023).
4. Wang, J.-F. et al. Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide, Nature Materials 22, 489-494 (2023).
5. Liu, X. et al. Heralded entanglement distribution between two absorptive quantum memories, Nature 594, 41-45 (2021).