Baojuan Dong
dongbaojuan@sxu.edu.cn
Education
2014–2019 Ph.D. in [Materials Physics and Chemistry], [Institute of Metal Research, Chinese Academy of Sciences]
2012–2014 M.S. in [Materials Physics and Chemistry], [Institute of Metal Research, Chinese Academy of Sciences]
2008–2012 B.S. in [Materials Science and Engineering], [Central South University]
Experience
2023–Present Scientist, Hefei National Laboratory
2021–Present Associate Professor, Shanxi University
2019–2021 Lecturer, Shanxi University
Overview of Academic Research
Prof. Dong’s research interest is the Fabrication and Functional Modulation of Novel Low-Dimensional Material Devices, to achieve prototype mesoscopic devices with novel composite modulation functions and revealing the mechanism of electric-field-regulated physical properties in mesoscopic systems.
Her major Research Directions/Fields:
* Novel Low-Dimensional Material Systems: Structural prediction, theoretical analysis, and experimental validation of novel low-dimensional magnetic materials and materials with high thermoelectric coefficients, combining first-principles calculations with experimental verification.
* New-Principle Mesoscopic Devices: Proposed replacing silicon-based channel materials in field-effect transistors with two-dimensional atomic crystals, fabricating FinFETs with atomically thin channels (0.6 nm).
* New Physical Effects: Twistronics, photo-induced topology, topological superconductivity at heterostructures, etc.
Major Honors and Awards
2024 "Wenying Young Scholar" Talent Program
2025 "Sanjin Talent—Youth Top Talents" Award
Representative Publications
1. Kai Zhao*, Baojuan Dong*, Yuang Wang* et al. Soft-matter-induced orderings in a solid-state van der Waals heterostructure, Nature Communications 16, 2359 (2025).
2. Mao-Lin Chen, Xingdan Sun, Hang Liu, Baojuan Dong†, Jing Zhang, Song Liu†, Dong-Ming Sun†, Zheng Han† et al: A FinFET with one atomic layer channel. Nature Communications 11, 1205 (2020)
3. Zhi Wang*, Tongyao Zhang*, Mei Ding*, Baojuan Dong*(contributed equally) et al: Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor. Nature nanotechnology 13(7), 554-559. (2018)
4. Baojuan Dong et al: Spontaneous antiferromagnetic order and strain effect on electronic properties of a-graphyne. Carbon 131 (2018): 223-228.
5. Baojuan Dong et al: New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials, Physical Review Materials 01/2019 3 (1), 013405.
6. Taojie Nian, Zhenhai Wang, Baojuan Dong†. Thermoelectric properties of α-In2Se3 monolayer. Appl. Phys. Lett. 118, 033103 (2021).
7. Lingling Ren; Baojuan Dong†; Ferroelectric Polarization in an h-BN-Encapsulated 30°- Twisted Bilayer–Graphene Heterostructure, Magnetochemistry, 2023, 9(5): 116-124
8. Yixiang Lu; Kai Zhao; Tongyao Zhang; Baojuan Dong†; Bipolar Nb3Cl8 Field Effect Transistors, Magnetochemistry, 2024, 10(6): 43
9. Linlin Chai; Fan Zhang; Yu Bai†; Baojuan Dong† ; Thermoelectric properties of monolayered MnBi2Te4, Journal of the American Ceramic Society, 2024, 107(11): 7331-7340
10. Baojuan Dong, Teng Yang, Jizhang Wang, Zhidong Zhang: Interface effect on structural and electronic properties of graphdiyne adsorbed on SiO2 and h-BN substrates: A first-principles study. Chinese Physics B 09/2015; 24(9).
11. Baojuan Dong, Teng Yang, Zheng Han: Flattening is flattering: The revolutionizing 2D electronic systems, Chinese Physics B 29 (9), 097307
12. Ye Zhang; Huaihong Guo†; Baojuan Dong† et al; Tailoring electronic properties of two-dimensional antimonene with isoelectronic counterparts, Chinene Physics B, 2020, 29: 037305
12. Ye Zhang; Huaihong Guo†; Baojuan Dong† et al; Tailoring electronic properties of two-dimensional antimonene with isoelectronic counterparts, Chinene Physics B, 2020, 29: 037305
13. Xiaoxi Li; Baojuan Dong† et al; Perspectives on exfoliated two-dimensional spintronics, Chinese Journal of Semiconductors, 2019, 40(8): 081508
14. Hanwen Wang et al; Gate tunable giant anisotropic resistance in ultra-thin GaTe, Nature Communications, 2019, 10: 2302
15. Yaning Wang et al; Quantum Hall phase in graphene engineered by interfacial charge coupling, Nature Nanotechnology, 2022, 17(5): 1272-1279
16. Xiangyan Han et al; Suppression of symmetry-breaking correlated insulators in a rhombohedral trilayer graphene superlattice, Nature Communications, 2024, 15(1): 9765
17. Sun Xingdan et al; Room temperature ferromagnetism in ultra-thin van der Waals crystals of 1T-CrTe2, Nano Research, 2020, 13(12): 3358-3363
18. Kaci L Kuntz et al, ACS applied materials & interfaces 9 (10), 9126-9135 (2017)
19. J Wang et al; Stability and electronic properties of two-dimensional indium iodide, Physical Review B 95 (4), 045404 (2017)